| Title | Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling. |
| Publication Type | Journal Article |
| Year of Publication | 2018 |
| Authors | Bang S, Duong NThanh, Lee J, Cho YHyun, Oh HMin, Kim H, Yun SJoon, Park C, Kwon M-K, Kim J-Y, Kim J, Jeong MSeok |
| Journal | Nano Lett |
| Volume | 18 |
| Issue | 4 |
| Pagination | 2316-2323 |
| Date Published | 2018 Apr 11 |
| ISSN | 1530-6992 |
| Abstract | Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS. Consequently, the overall photocurrent of the hybrid 1L-MoS photodetector was observed to be 250 times better than that of the pristine 1L-MoS photodetector. In addition, the photoresponsivity and photodetectivity of the hybrid photodetector were effectively improved by a factor of ∼1000. This study provides a new approach for realizing highly efficient optoelectronic devices based on TMDCs. |
| DOI | 10.1021/acs.nanolett.7b05060 |
| Alternate Journal | Nano Lett. |
| PubMed ID | 29561626 |
Submitted by kej2006 on June 6, 2018 - 4:13pm